The technology of creating of ultra thin dielectric layers

Dielectric is a fundamental element of micro and Nanotechnological instruments,against which are demands.This exceptionally is about tunneling structures, their main parameter is capacity of condesator and tunneling resistance which are made by dielectric.One of the main request for such super thin dielectric is to have big dielectical penetration for kulonical blockade voltage’s low meaning and breaking tension made by dielectric.Its admission temperature must be low because the standard temperature is hight and is making diffusion of undesirable impurities at this time is creating defects, deferioration of adhesion with coverings, which acts badly for its and for device options which are created for it. The aim of this thesis work is to receive highter degree of thin plates than silicium with low-temperature catalystical plasmatic anodizing . The essence of the process of catalytic plasma anodizing lies in the idea: on the surface of silicium which is chemically cleaned ,with magnetronic method streches thin plate of titany. After this streches thin plate of Itrium by this method the temperature of receiving a dielectric reduces to three and increases the efficiency of the process by sequential.After finishing this process the rust of Itrium opens chemically without spoiling other parts . On the basis of receiped Titan oxide plate is assigned the thickness of oxide, change indicator ,how piled is a surface ,structure of Aluminium-Titan Oxide-Salicic, is created and on the basis of this is found dielectrical penetration charge in dielectric and on the dividing edge.Receipted oxide’s Electrical-Physical options gives the basis that they may be used in technology of creating nano instruments.