Getting process of slimmest nitridic template tecnology

States made on The base of wide zone semiconductor GaN, confesses one of the perspective stuff for high-frequency transistors, monolithic integral devices, laser and light diodes. That apparatus works more wide frequency amplitude, on high temperature, and high power then adequate apparatus which are made of Si, GaAs, SiC and other semiconductors. Using it in modern radioelectronic gadgets basically augments quality of integration, modulation of intensification ant other parameters. The main aim is to model light emissary in white area of the spectrum to use this light diodes in full colour screens and in other technology. We can get GaN with different ways on different stuff : molecular- radial or fluid epitaxy, double-phase chemic spread, precipitation from colloidal solutions and spread, with lengmy-blonjet technology, with chemical reaction on metalorganic compounds accompaniment with gastransport and others. They have positive and negative sides. Therefore, my thesis aim is: get GaN with magnetronic atomize Ga in N-s area, fitful photonic bake and measure some parameters.